38 mm diameter photomultiplier tube for scintillation counting, gamma camera bialkali photocathode, 10 stages, head-on type characteristics (at 25 c) voltage dlstrlbutlon ratlo and supply voltage general maximum ratings (absolute maximum values) information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?012 hamamatsu photoni cs k.k. subject to local technical requirements and regulations, availability of products included in this promotional material may var y. please consult with our sales office. supply voltage: 1000 v, k: cathode, dy: dynode, p: anode electrodes normal divider type tapered divider type k dy1 2 dy2 1 dy3 1 dy4 dy5 1 dy6 1 dy7 11 dy8 dy9 dy10 p 1111 2 1 1 1 1 1 1.2 1.5 2.2 3.6 3 photomultiplier tube R11102, R11102-01 parameter min. unit cathode sensitivity anode sensitivity gain anode dark current (after 30 min storage in darkness) time response stability pulse linearity note: anode characteristics are measured with the voltage distribution ratio shown below. ( ): measured with the special voltage distribution ratio (tapered divider) shown below. luminous (2856 k) radiant at 420 nm blue sensitivity index (cs 5-58) luminous (2856 k) radiant at 420 nm anode pulse rise time electron transit time long term short term 2 % deviation 5 % deviation 80 10 120 89 11.5 120 8.9 10 4 1.0 10 6 2 3.2 34 0.5 0.5 10 (50) 30 (70) a/lm ma/w a/lm a/w na ns ns % % ma ma 20 typ. max. parameter unit spectral response wavelength of maximum response photocathode window material dynode operating ambient temperature storage temperature materiai minimum effective area structure number of stages 300 to 650 420 bialkali 34 borosilicate glass circular and linear-focused 10 -30 to +50 R11102 : -30 to +50 R11102-01: -80 to +50 nm nm mm c c description / value parameter unit supply voltage average anode current between anode and cathode between anode and last dynode 1250 200 0.1 v v ma value
figure 1: typical spectral response figure 2: typical gain tpmh1324e02 feb. 2012 ip figure 3: dimensional outline and basing diagram (unit: mm) photomultiplier tube R11102, R11102-01 hamamatsu photonics k.k. hamamatsu photonics k.k., electron tube division 314-5, shimokanzo, iwata city, shizuoka pref., 438-0193, japan, telephone: (81)539/62-5248, fax: (81)539/62-2205 u.s.a.: hamamatsu corporation: 360 foothill road, p. o. box 6910, bridgewater. n.j. 08807-0910, u.s.a., telephone: (1)908-231-0960, fa x: (1)908-231-1218 e-mail: usa@hamamatsu.com germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49)8152-375-0, f ax: (49)8152-2658 e-mail: info@hamamatsu.de france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: (3 3)1 69 53 71 00, fax: (33)1 69 53 71 10 e-mail: infos@hamamatsu.fr united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road welwyn garden city hertfordshire al7 1bw, united kingdom, teleph one: 44-(0)1707-294888, fax: 44(0)1707-325777 e-mail: info@hamamatsu.co.uk north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171-41 solna, sweden, telephone: (46)8-509-031-00, fax: (46)8-509-031-01 e-mail: info@hamamatsu.se italy: hamamatsu photonics italia: s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39)02-935 81 733, fax: (39)02-935 81 741 e-mail: info@hamamatsu.it china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 10002 0, china, telephone: (86)10-6586-6006, fax: (86)10-6586-2866 e-mail: hpc@hamamatsu.com.cn www.hamamatsu.com tpmhb0832ea tpmhb0833ea 0.01 300 100 0.1 1 10 wavelength (nm) cathode radiant sensitivity (ma/w) quantum efficiency (%) 700 800 500 200 600 400 quantum efficiency cathode radiant sensitivity tpmha0574ea 500 10 2 10 8 10 7 10 4 10 3 10 6 10 5 10 -11 10 -5 10 -6 10 -9 10 -10 10 -7 10 -8 supply voltage (v) gain anode dark current 900 1100 1300 700 1500 anode dark current gain R11102 tpmha0565ea b basing diagram (bottom view) 1 3 2 4 5 6 10 9 11 12 13 15 dy1 dy3 dy5 dy7 dy9 dy6 dy8 dy10 dy4 dy2 k p 34 min. 38.0 0.7 faceplate photo- cathode semi flexible leads a b 12.5 2.5 13 max. 87 2 70 min. a lead orientation (bottom view) 7.5 0.5 23.0 0.5 16 0.8 +0.05 - 0.2 R11102-01 basing diagram (bottom view) 1 3 2 4 5 6 10 9 8 7 11 12 dy1 dy3 dy5 dy7 dy9 dy6 dy8 dy10 dy4 dy2 k p photo- cathode 12 pin base jedec no. b12-43 34 min. 38 0.7 faceplate 99 2 116 max. 37.3 0.5 please consult with hamamatsu for suitable high voltage power supplies.
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